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Guocheng Huang

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Biographie

Guocheng Huang was born in China in 1989. He received the B.S. degree (2011) in electronics science and technology from the Beijing University of Chemical Technology, Beijing, China, in 2011. He got Ph.D. degree (2016) in Microelectronics and Solid-State electronics from University of Chinese Academy of Sciences, Beijing. He is currently a Sr. Electrical Engineer/Architect in ASML. His current research interests include Multi-channel low noise bio-sensing IC design, accelerometer readout circuit design, bandgap reference circuit, Operation Amplifier, OTA, TIA, FDA, and power electronics. He also focus on SEM control circuit, current source driver, electron beam recording circuit, high-voltage (kV level) low-noise driver circuit, Laser/optical control electronics.

Formation

  • Beijing University of Chemical Technology
    Diplôme Bachelor
    Domaine d'études Electronics Science and Technology
  • University of Chinese Academy of Sciences
    Diplôme PhD
    Domaine d'études Institute of Electrics
    Date de début 01/2011
    Date de fin 01/2016